Chursanova 2010

2010 - Applied Surface Science 2010, 256, 3369–3373

Optimization of porous silicon preparation technology for SERS applications

M.V. Chursanova, L.P. Germash, V.O. Yukhymchuk, V.M. Dzhagan, I.A. Khodasevich and D. Cojoc


A series of porous silicon samples prepared at different etching parameters, namely etchant composition, etching time and current density, was investigated as substrates for surface-enhanced Raman scattering (SERS). Silver nanostructures were deposited on porous silicon by immersion plating method and Rhodamine 6G was used as analyte. The relation between the etching parameters, morphology of porous silicon surface and its SERS efficiency after silver deposition is examined. We show that a high HF content in the etchant allows the formation of a film with close-packed silver nanocrystals, which possess strong surface enhancement properties.


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